Electronics Weekly

1,700V GaN mosfet IC from Power Integrations

Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc ...
Business Wire

Transphorm’s Second 900 V GaN FET is Now in Production

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
Business Wire

Transphorm Releases New GaN FET Reliability Ratings, Now Segmented by Power Level

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
EDN

High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place

There is a lot of interest in the WBG technologies such as SiC and GaN and the purpose here is to show that both Si and WBG materials (SiC and GaN) all have their place within the power industry and ...
Electronic Design

Automotive GaN FET Features Integrated Driver

Wide-bandgap semiconductors are an attractive material for power devices due to low losses, improved temperature capability, and high thermal conductivity. Compared to silicon (Si), with a larger ...
Semiconductor Engineering

What Happened To GaN And SiC?

About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology. At the time, some thought that ...
EDN

600-V GaN FET and driver doubles power density at half the loss

The LMG3410 70-mΩ, 600-V GaN FET power-stage is the first high-voltage driver-integrated GaN solution. The power stage delivers 50% lower power losses in a totem-pole PFC compared with ...
New Electronics

Nexperia expands GaN FET portfolio to support a wider range of applications

This latest release is, according to Nexperia, intended to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs will address multiple ...
Embedded

Renesas: plastic packaged, radiation-tolerant PWM controller and GaN FET driver for smallsats

Renesas Electronics announced the space industry’s first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride FET driver for DC/DC power supplies in small satellites (smallsats) and ...
Electronic Design

GaN Boosts MOSFET Figure of Merit

The first of two GaN MOSFET introductions from International Rectifier can switch up to 5 MHz, deliver up to 30 A output, and have a figure of merit better than their silicon cousins. Tim McDonald, ...
Electronics Weekly

Nexperia’s power GaN FET range is available from Farnell

Distributor Farnell is now shipping Nexperia’s power GaN FETs. The FETs can be used in hard switching for AC-DC totem pole power factor correction (PFC) applications, LLC phase shift full-bridge ...
New Electronics

EPC Space develops 300 V Rad-Hard GaN FET for satellite power systems

EPC Space, the radiation-hardened (RH) gallium nitride (GaN) power device specialist, has launched the EPC7030MSH. The EPC7030MSH is a radiation-hardened 300 V gallium nitride FET Credit: EPC Space A ...