Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

At the heart of an inverter is the IGBT, a costly power device which must switch extremely fast and is required to withstand the high DC bus voltage. The efficiency and reliability provided by these ...

SEOUL, South Korea, November 03, 2025--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX) ("Magnachip" or the "Company") today announced it has concluded an agreement with Hyundai Mobis ...

“This is the best value welder I have ever seen.” That’s where the Bilt Hard 135A 3-in-1 IGBT Inverter Welder comes in, and the complete kit is on sale for just $110 right now at Amazon. This 110V ...

Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

Given the many varieties of advanced power devices available, choosing the right power device for an application can be a daunting task. For solar inverter applications, it is well known that ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Infineon has introduced an IGBT power module tailored to the needs of electric vehicle traction inverters in the 80 kW to 100 kW power class: the HybridPACK DC6i. This six pack module is optimized to ...

Renesas Electronics has developed a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next ...