Modelithics and Guerrilla RF Collaborate to Deliver Nonlinear GaN-on-SiC HEMT Models from 15 W to 150 W P SAT for ...
As power electronics shrink in size, the demands on power, frequency, and efficiency grow exponentially. The semiconductor industry is leaning heavily into wide bandgap materials like gallium nitride ...
Editor’s note: The following white paper is from an IMAPS conference in 2014 in San Diego presented by GaN Systems and AT&S. We were just granted permission to publish this paper. Large GaN ...
December 18, 2012. Agilent Technologies Inc. today announced the latest release of its device modeling software platform, the Integrated Circuit Characterization and Analysis Program (IC-CAP). With IC ...
Researchers from Chung-Ang University propose a strategy that addresses the stability and efficiency issues of GANs, boosting their performance while also being flexible enough to adapt to different ...
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Atomera's quantum-engineered MST(R) films and Synopsys' TCAD simulation combine to accelerate next-generation GaN device development for RF and power electronics ...
LOS GATOS, Calif. - Atomera Incorporated (NASDAQ:ATOM) announced Thursday an expanded collaboration with Synopsys, Inc. to advance gallium nitride device modeling for radio frequency and power ...
In April 2026, Synopsys announced an expanded collaboration with Atomera to enhance gallium nitride device modeling for radio frequency and power semiconductor applications, building on their ...
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