IEEE

Characterization Methods of TMD Transistor Gate Dielectrics Targeting 1 nm EOT for 2-D CMOS Scaling

Abstract: 2-D materials show promise to possibly replace Si channel material to continue Moore’s Law scaling of transistors down to 5 nm gate lengths. The scaling opportunities of 2-D materials arise ...
IEEE

Gate Stack Engineering and Carrier Dynamics of Optically Triggered GaN Transistors on 650V GaN-on-Si Power Platform

Abstract: This work investigates the physics and engineering of the gate stack in GaN-based optically triggered transistors (OTTs) on 650V GaN-on-Si power platform to enable, for the first time, ...
Interesting Engineering

‘World’s first’: IBM packs 100 billion transistors into a fingernail-sized sub-1 nm chip

IBM has introduced what it calls the world’s first sub-1 nanometer semiconductor technology, unveiling a 0.7 nm chip built on a new three-dimensional transistor architecture designed to extend chip ...
Hosted on MSN

How to calm the ocean

The water’s behavior changes fast once the setup kicks in Report: Angelina Jolie tried to get back with Brad Pitt but he rejected her 30 films you need to watch before you die Everything to know about ...
Phys.org

Atomic-level simulations predict transistor scaling limits

As the global semiconductor industry enters the so-called 2-nanometer process era, the actual size of transistors—the core components of semiconductor chips—still remains above 10 nm. How much smaller ...
Nanowerk

Atomic simulations reveal how far transistors can shrink

Simulations show which 2D transistor designs best control leakage as devices shrink, helping guide future chip scaling below today’s limits. (Nanowerk News) As the global semiconductor industry enters ...